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The DI025N06PT-AQ is an N-Channel Power MOSFET in a QFN3x3 package. It features a drain-source voltage (VDSS) of 65 V and continuous drain current (ID) of 25 A at 25°C, dropping to 15 A at 100°C. The on-state resistance (RDS(on)) is typically 15.8 mΩ at VGS=10V/ID=8A, with a maximum of 30 mΩ at VGS=4.5V/ID=5A. Peak drain current reaches 80 A. Total gate charge (Qg) is typically 9 nC. Avalanche energy (EAS) is rated at 4.3 mJ. Thermal resistance junction-to-case (RthJC) is less than 5 K/W. Operating temperature range spans -55°C to +150°C.
Verify the specific suffix requirements for your application. The -AQ suffix indicates AEC-Q101 qualification, which is distinct from standard commercial grade parts. Confirm that the QFN3x3 package dimensions and thermal characteristics align with your PCB layout and heat dissipation capabilities before finalizing procurement.
Select this component when a compact footprint is required alongside high current handling capabilities. The low RDS(on) minimizes conduction losses, while the fast switching speeds support high-frequency operation. Ensure the design accounts for the 65V breakdown voltage and the thermal resistance limits under expected load conditions.
This device belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, designed for general-purpose switching applications. The QFN3x3 form factor allows for dense PCB layouts. The -AQ variant specifically meets automotive reliability standards, expanding its utility beyond standard industrial or consumer electronics into more demanding environments.
Check pinout compatibility and package dimensions against existing designs. Verify that replacement candidates meet or exceed the 65V VDSS, 25A ID, and <30mΩ RDS(on) specifications. Ensure thermal performance and switching characteristics are suitable for the target circuit.
The -Q suffix indicates the part is AEC-Q101 compliant, while the -AQ suffix signifies it is AEC-Q101 qualified. Both relate to automotive standards but denote different levels of certification.
The single pulse avalanche energy (EAS) is rated at 4.3 mJ under specified test conditions (VDD = 9.3 A, IDS = 14 A, L = 0.1 mH, RG = 25 Ω).