DI025N06PT-AQ

DI025N06PT-AQ

$0.52
  • Description:MOSFET POWERQFN 3X3 65V 0.02OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:665ded746c26 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET POWERQFN 3X3 65V 0.02OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):65 V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:406 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-QFN (3x3)
  • Package / Case:8-PowerVDFN

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DI025N06PT-AQ

Overview

The DI025N06PT-AQ is an N-Channel Power MOSFET in a QFN3x3 package. It features a drain-source voltage (VDSS) of 65 V and continuous drain current (ID) of 25 A at 25°C, dropping to 15 A at 100°C. The on-state resistance (RDS(on)) is typically 15.8 mΩ at VGS=10V/ID=8A, with a maximum of 30 mΩ at VGS=4.5V/ID=5A. Peak drain current reaches 80 A. Total gate charge (Qg) is typically 9 nC. Avalanche energy (EAS) is rated at 4.3 mJ. Thermal resistance junction-to-case (RthJC) is less than 5 K/W. Operating temperature range spans -55°C to +150°C.

Feature Summary

  • Space-saving QFN3x3 package with low profile height
  • Low on-state resistance for efficient power handling
  • Fast switching times with low gate charge
  • AEC-Q101 qualified for automotive applications

Applications

  • Power Management Units
  • Battery powered devices
  • Load Switches
  • Polarity Protection

Procurement Notes

Verify the specific suffix requirements for your application. The -AQ suffix indicates AEC-Q101 qualification, which is distinct from standard commercial grade parts. Confirm that the QFN3x3 package dimensions and thermal characteristics align with your PCB layout and heat dissipation capabilities before finalizing procurement.

Selection Notes

Select this component when a compact footprint is required alongside high current handling capabilities. The low RDS(on) minimizes conduction losses, while the fast switching speeds support high-frequency operation. Ensure the design accounts for the 65V breakdown voltage and the thermal resistance limits under expected load conditions.

Part Context

This device belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, designed for general-purpose switching applications. The QFN3x3 form factor allows for dense PCB layouts. The -AQ variant specifically meets automotive reliability standards, expanding its utility beyond standard industrial or consumer electronics into more demanding environments.

Replacement Considerations

Check pinout compatibility and package dimensions against existing designs. Verify that replacement candidates meet or exceed the 65V VDSS, 25A ID, and <30mΩ RDS(on) specifications. Ensure thermal performance and switching characteristics are suitable for the target circuit.

FAQ

What is the difference between the -Q and -AQ suffixes?

The -Q suffix indicates the part is AEC-Q101 compliant, while the -AQ suffix signifies it is AEC-Q101 qualified. Both relate to automotive standards but denote different levels of certification.

What is the maximum avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 4.3 mJ under specified test conditions (VDD = 9.3 A, IDS = 14 A, L = 0.1 mH, RG = 25 Ω).

DI025N06PT-AQDI025N06PT-AQ
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