DI035N10PT-AQ

$0.65

Description：MOSFET POWERQFN 3X3 N 100V 35A 0
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a6d4ab4ee477 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 100V 35A 0
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1220 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerWDFN

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DI035N10PT-AQ

Overview

The DI035N10PT-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 (DFN3030) surface-mount package. It features a drain-source voltage rating of 100 V and supports a continuous drain current of 35 A at 25°C case temperature. The device exhibits a low on-state resistance of less than 18 mΩ at VGS = 10 V and 7 A. Key dynamic characteristics include a total gate charge of 22 nC at VGS = 10 V and fast switching times with turn-on rise and fall times of 8 ns and 5 ns respectively. The component is rated for a maximum junction temperature of 150°C and offers a single pulse avalanche energy capability of 29 mJ.

Feature Summary

AEC-Q101 qualified automotive grade reliability
Ultra-low profile space-saving QFN3x3 package
Logic-level drive compatibility
Fast switching performance with low gate charge

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection circuits

Procurement Notes

Verify the specific suffix -AQ to confirm AEC-Q101 qualification status as distinct from standard commercial grades. Ensure that thermal management designs account for the specified thermal resistance values relative to the PCB copper pad area. Confirm compliance requirements such as RoHS and REACH align with target market regulations before finalizing procurement specifications.

Selection Notes

Select this component when high current density and low conduction losses are required within strict spatial constraints. The logic-level gate drive capability simplifies driver circuit design for lower voltage control signals. Consider the thermal resistance parameters and available board space for heat dissipation to ensure operation remains within the safe operating area under peak load conditions.

Part Context

This part belongs to the DI0XX series of power MOSFETs from Diotec Semiconductor, designed for efficient power switching in compact electronic systems. The DI035N10PT variant specifically targets applications requiring robust 100V handling capabilities in a minimal footprint. The -AQ suffix denotes adherence to automotive quality standards, expanding its suitability beyond standard industrial or consumer electronics into more demanding environments.