DI035N10PT

$0.69

Description：MOSFET POWERQFN 3X3 N 100V 35A 0
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:94a4d98eb1ec Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 100V 35A 0
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1220 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerWDFN

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DI035N10PT

Overview

The DI035N10PT is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN3x3 (DFN3030) surface-mount package. It features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 35 A at 25°C case temperature. The device exhibits a low on-state resistance of 14 mΩ typical value at VGS=10V. Key electrical parameters include a maximum power dissipation of 25 W, a junction temperature range of -55°C to +150°C, and a single pulse avalanche energy rating of 29 mJ. The component is designed for logic-level drive with a gate threshold voltage between 1.2 V and 2.5 V.

Feature Summary

Compact QFN3x3 package design offering space-saving benefits with low profile height
Low on-state resistance and fast switching times for efficient power management
Logic-level gate drive capability supported by low total gate charge
High thermal performance with a maximum junction temperature of 150°C

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection circuits

Procurement Notes

Verify the specific ordering suffix when procuring. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm moisture sensitivity level (MSL 3) and soldering conditions (260°C/10s) match assembly requirements. Ensure RoHS compliance documentation is obtained as per manufacturer standards.

Selection Notes

Select this component for applications requiring high current density in small footprints. The 100 V rating provides adequate margin for 48 V systems. Consider the 14 mΩ RDS(on) for conduction loss calculations at 35 A. Verify thermal resistance values against PCB copper pad area, as ambient thermal resistance depends heavily on layout. Check if automotive qualification is required to determine the correct suffix variant.

Part Context

This part belongs to the DI0XX series of N-Channel Power MOSFETs manufactured by Diotec Semiconductor. It utilizes silicon technology and is available in the DFN3030 form factor. The product line includes complementary P-Channel variants and automotive-grade options. The marking code for identification is 310N170.