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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 P -40V -35A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2570 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerWDFN
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Overview
The DI035P04PT is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for surface-mount applications in the DFN3030 (PowerQFN 3x3) package. It features a drain-source voltage rating of -40 V and a continuous drain current of -35 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 19 mΩ at VGS = -4.5 V and ID = -8 A. Key electrical parameters include a gate-source threshold voltage ranging from 1.2 V to 2.5 V, total gate charge of 30 nC, and power dissipation capability of 30 W. The component supports a junction temperature up to 175°C and complies with RoHS standards.
Feature Summary
- Logic level gate drive capability for efficient control
- Compact DFN3030 package with low profile height
- Low on-state resistance for reduced conduction losses
- Fast switching times with low gate charge
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix when procuring. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm that the requested variant matches the required automotive or industrial reliability standards before finalizing orders.
Selection Notes
Select this component for designs requiring high current handling in a small footprint. Ensure the gate drive voltage meets the logic level requirement, as RDS(on) varies significantly between -10 V and -4.5 V drive conditions. Consider thermal management strategies given the 30 W dissipation rating and the thermal resistance characteristics provided in the datasheet.
Part Context
This part belongs to the DI0XX series of Power MOSFETs from Diotec Semiconductor. It shares the DFN3030 package form factor with other variants in the lineup but differs in voltage ratings and channel polarity. The DI035P04PT specifically addresses the need for P-Channel solutions in compact power electronics.
Replacement Considerations
Check for DI035N10PT if an N-Channel equivalent is needed. Verify pinout compatibility and thermal performance against other DFN3030 packages from different manufacturers before substitution.
