DI038N04PQ2-AQ

Overview

The DI038N04PQ2-AQ is an automotive-grade dual N-channel power MOSFET from Diotec Semiconductor, designed for high-efficiency switching applications. It features a VDSS of 45 V and a continuous drain current (ID) of 38 A at TC = 25°C, with a maximum on-state resistance (RDS(on)) of 13.5 mΩ at VGS = 10 V. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 21 W of power. Qualified under the AEC-Q101 standard, it utilizes a compact QFN5x6 Dual package to minimize footprint while maintaining robust thermal performance.

Feature Summary

• Dual configuration integrates two independent N-channel MOSFETs into a single low-profile package to reduce board space.
• AEC-Q101 qualified status ensures compliance with automotive reliability standards for discrete semiconductor devices.
• Low on-state resistance and fast switching characteristics optimize efficiency in synchronous rectification and DC/DC converter designs.

Applications

• DC/DC Converters
• Synchronous Rectifiers
• Automotive Charging Port Covers

Procurement Notes

Verify that the specific ordering suffix matches the required qualification level. The suffix -AQ indicates AEC-Q101 qualified status, whereas -Q denotes AEC-Q101 compliant status. Confirm package availability and ensure the supplier provides necessary documentation such as PPAP files if required by the automotive supply chain.

Selection Notes

Select this component when a dual N-channel topology is required in a constrained PCB area. Ensure the design accounts for the 45 V drain-source voltage limit and the 38 A continuous current rating at case temperature. Evaluate thermal management requirements based on the 21 W power dissipation capability and the RthJA of 58 K/W for ambient cooling scenarios.

Part Context

This part belongs to Diotec's PowerQFN series of automotive-grade MOSFETs. It serves as a dual-channel alternative to using separate single-channel devices, offering a streamlined solution for bridge circuits or half-bridge configurations in automotive electronics where space optimization and high current handling are critical.

Replacement Considerations

Direct replacements must match the dual N-channel architecture, 45 V rating, and QFN5x6 package dimensions. Verify that any substitute also holds AEC-Q101 qualification and comparable RDS(on) and thermal resistance specifications to maintain circuit performance integrity.