ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DI040N10D1
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The DI040N10D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage of 100 V and a continuous drain current of 40 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 15 mΩ and supports a power dissipation of 140 W. Key electrical parameters include a gate-source threshold voltage ranging from 2 V to 4 V, a total gate charge of 94 nC, and a single pulse avalanche energy rating of 520 mJ. The junction temperature range extends from -55°C to +175°C.
Feature Summary
- Avalanche rated for robust energy handling
- Low on-state resistance for efficient conduction
- Fast switching times with low gate charge
- Standard level gate drive compatibility
Applications
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Battery Charger
Procurement Notes
Verify the specific ordering suffix and packaging configuration before procurement. Confirm that the component meets RoHS compliance standards and REACH regulations as specified in the datasheet. Ensure the supplier provides valid traceability documentation. Check for any regional export control restrictions applicable to this semiconductor product.
Selection Notes
Select this component for applications requiring standard-level gate drive and high reliability in commercial or industrial environments. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Evaluate the avalanche energy capability if inductive load switching is present. Verify compatibility with existing circuit voltages and current requirements.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for general-purpose power switching. It serves as a standard commercial/industrial grade alternative to automotive qualified versions like the DI040N10D1-AQ. The device utilizes silicon technology optimized for low conduction losses and fast switching performance in compact D-PACK packages.
Replacement Considerations
For automotive-grade requirements, consider the DI040N10D1-AQ variant which complies with AEC-Q101 standards. Other N-channel MOSFETs with similar voltage and current ratings may be suitable depending on specific package and thermal constraints.
