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Product Detailed Parameters
- Description：MOSFET POWERQFN 5X6 N 80V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1812 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：56.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI048N08PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 (TDSON-8/DFN5060) package. It features a drain-source voltage of 80 V and a continuous drain current of 48 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 6.5 mΩ at VGS=10V and 8.5 mΩ at VGS=4.5V. Key electrical parameters include a gate-source threshold voltage range of 1.3 V to 2.3 V, total gate charge of 35 nC, and forward transconductance of 38 S. Thermal performance includes a junction-to-case thermal resistance below 2.2 K/W and a power dissipation rating of 56.8 W at 25°C.
Feature Summary
- Logic level gate drive capability for efficient control
- Low profile, space-saving QFN5x6 package design
- Avalanche rated with 100% avalanche testing
- Fast switching times and low gate charge
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when procuring. The standard DI048N08PQ is commercial/industrial grade. The -Q suffix indicates AEC-Q101 compliance, while the -AQ suffix denotes qualification in progress. Confirm RoHS and REACH compliance status directly with the manufacturer or authorized distributors prior to finalizing orders.
Selection Notes
Select this component for applications requiring high current handling in a compact footprint. The logic-level gate drive supports direct interfacing with standard logic controllers. Ensure adequate thermal management is provided, as power dissipation ratings are based on case temperature measurements. Verify that the 80 V breakdown voltage provides sufficient margin for the target circuit's operating conditions.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for general-purpose switching applications. It utilizes silicon technology and is available in surface-mount configurations. The product line includes variants with different automotive qualifications to meet diverse industry reliability standards.
Replacement Considerations
Check for DI048N08PQ/-Q or DI048N08PQ/-AQ equivalents if automotive qualification is required. Verify pinout compatibility and thermal resistance specifications before substituting with other manufacturers' parts.
