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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 N 40V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI050N04PT is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 package. It features a Drain-Source voltage (VDSS) of 40 V and a continuous Drain current (ID) of 50 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 5.7 mΩ at VGS = 10 V and ID = 10 A. Key electrical parameters include a Gate-Source threshold voltage ranging from 1 V to 2.5 V, a total gate charge of 70 nC, and a maximum power dissipation of 30 W at 25°C. The component supports a junction temperature up to 175°C and offers a single pulse avalanche energy rating of 103 mJ.
Feature Summary
- Compact QFN3x3 package with low profile height for space-constrained designs
- Low on-state resistance to minimize conduction losses
- Fast switching times with low gate charge for efficient operation
- High thermal stability with a maximum junction temperature of 175°C
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The base model DI050N04PT represents the standard commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm the required reliability grade matches your application standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high current handling in a small footprint. Ensure the design accounts for the thermal resistance characteristics, specifically RthJC of less than 5 K/W. Verify that the operating conditions stay within the Safe Operating Area (SOA) limits, particularly regarding peak drain current and pulse durations.
Part Context
This part belongs to Diotec's Power MOSFET lineup designed for modern electronics. It utilizes Silicon technology and is compliant with RoHS directives without exemptions, as well as REACH regulations. The product is supplied in taped and reeled packaging, suitable for automated surface mount assembly processes.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official distributor databases or manufacturer cross-reference tools for potential alternatives.
