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Product Detailed Parameters
- Description：MOSFET, DPAK, 60V, 50A, 0, 42W
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI050N06D1 is an N-channel enhancement mode MOSFET manufactured by Diotec Semiconductor. It utilizes silicon technology and is housed in a TO-252AA-4 (DPAK) surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 50 A. Key electrical characteristics include a maximum on-resistance of 3.8 mΩ, a gate threshold voltage ranging from 1.6 V to 2.5 V, and a total gate charge of 79 nC. It operates within a temperature range of -55°C to +175°C with a power dissipation rating of 125 W.
Feature Summary
- High current handling capability suitable for power switching applications
- Low on-resistance for improved energy efficiency
- Robust thermal performance with high junction temperature tolerance
Applications
- Motor control circuits
- Power supply output stages
- DC-DC converter topologies
Procurement Notes
Verify the specific suffix 'D1' against the official Diotec Semiconductor datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation. Confirm RoHS compliance status directly from the product specification sheet before integration into regulated assemblies.
Selection Notes
Select this component when a 60 V N-channel MOSFET with high current capacity is required. Compare the 3.8 mΩ on-resistance against system loss requirements. Verify that the TO-252AA-4 package fits the PCB footprint constraints. Ensure the driver circuit can handle the 79 nC gate charge for optimal switching speeds.
Part Context
This part belongs to Diotec's discrete power MOSFET portfolio, designed for general-purpose power switching. It complements other devices in the series offering various voltage and current ratings. The TO-252AA-4 package is standard for medium-power applications requiring efficient heat dissipation through the lead frame.
Replacement Considerations
Consult the official Diotec replacement guide or PCN documents for authorized substitutes. Generic equivalents must match the 60 V/50 A rating, 3.8 mΩ Rds(on), and TO-252AA-4 package dimensions. Verify pin compatibility and thermal characteristics before substitution.
