DI050P03PT-AQ

$1.07

Description：MOSFET POWERQFN 3X3 P -30V
Series：-
Mfr：Diotec Semiconductor
Package：Cut Tape (CT),Bulk

SKU:09d19457b843 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 P -30V
Series：-
Mfr：Diotec Semiconductor
Package：Cut Tape (CT),Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3721 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI050P03PT-AQ

Overview

The DI050P03PT-AQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN3x3 package. It features a drain-source voltage (VDSS) of -30 V and a continuous drain current (ID) of -50 A at TC = 100°C. The device exhibits a maximum on-state resistance (RDS(on)) of 8.0 mΩ at VGS = 4.5 V and ID = 15 A. Key electrical parameters include a gate-source threshold voltage (VGS(th)) ranging from 1.2 V to 2.5 V, a total gate charge (Qg) of 70 nC, and a power dissipation (PD) of 39 W at TC = 25°C. The component supports a single pulse avalanche energy (EAS) of 43.4 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low on-state resistance for efficient power handling
Fast switching times with low gate charge
Tiny, space-saving QFN3x3 package with low profile height

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific suffix designation when ordering. The '-AQ' suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm final automotive grade status directly with the manufacturer or authorized distributors before integrating into qualified automotive designs. Ensure procurement channels provide official datasheets matching this exact part number to validate current qualification status.

Selection Notes

Select this component for applications requiring high current density in a compact footprint. The low RDS(on) minimizes conduction losses, while the fast switching characteristics support high-frequency operation. Consider the thermal resistance values for heat sink design, as the QFN3x3 package relies heavily on PCB copper area for effective heat dissipation. Verify that the gate drive voltage meets the threshold requirements for full enhancement.

Part Context

Diotec Semiconductor specializes in discrete semiconductor components, including diodes, transistors, and MOSFETs. Founded in Germany in 1973, the company serves industrial, automotive, and consumer electronics markets. The DI050P03PT belongs to their Power MOSFET lineup, designed for standard commercial and industrial grades, with specific variants targeting automotive reliability standards through AEC-Q101 processes.