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The DI056N10D2-AQ is an N-Channel Power MOSFET in a TO-263AB (D²-PAK) package. It features a drain-source voltage of 100 V and continuous drain current of 56 A at 25°C, with a maximum on-state resistance of 9.5 mΩ at VGS = 10 V. The device supports logic level gate drive and has a junction temperature rating up to 175°C. It includes avalanche energy capability rated at 70.5 mJ.
Verify the specific suffix -AQ confirms AEC-Q101 qualification status before procurement. Ensure the ordering code matches the exact D²-PAK package variant required for your PCB footprint. Confirm RoHS compliance documentation aligns with regional regulatory requirements.
Select this component when a 100 V N-Channel MOSFET with high current handling is needed. The low RDS(on) makes it suitable for power conversion applications requiring efficiency. Verify thermal management capabilities as the device dissipates significant heat under load.
This part belongs to Diotec's standard commercial/industrial grade discrete semiconductor lineup. The -AQ suffix denotes automotive qualification according to AEC-Q101 standards, expanding its potential use cases beyond standard industrial environments.
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet or exceed the 100 V breakdown voltage and 56 A current ratings.
The maximum junction temperature is 175°C.
Yes, the -AQ suffix indicates it is AEC-Q101 qualified.