DI080N06PQ

$2.16

Description：MOSFET POWERQFN 5X6 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76fa36150811 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

Download product information

DI080N06PQ

Overview

The DI080N06PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 package. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 105 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 3 mΩ at VGS = 10 V. Key electrical parameters include a power dissipation (PD) of 65.8 W, a single pulse avalanche energy (EAS) of 185.4 mJ, and a maximum junction temperature (Tjmax) of 150°C.

Feature Summary

Low profile, space-saving package design
Avalanche rated for robust operation
Fast switching times with low gate charge
Compliant to RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these details against the datasheet to ensure the component meets the required reliability standards for your specific application environment.

Selection Notes

Select this component for applications requiring high current handling in a compact footprint. The low thermal resistance facilitates efficient heat dissipation. Ensure the operating conditions remain within the specified safe operating area. Consider the avalanche rating if inductive load switching is present. Verify that the logic-level gate drive requirements align with the control circuitry capabilities.

Part Context

This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs by Diotec Semiconductor. These devices utilize advanced trench technology to achieve low on-state resistance and fast switching speeds. They are designed for commercial and industrial use, offering a balance of performance and size efficiency in modern electronic designs.