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The DI080N10PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 80 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 5 mΩ and supports a maximum junction temperature up to 175°C. Key electrical parameters include a single pulse avalanche energy (EAS) of 144 mJ, power dissipation of 60 W, and a total gate charge of 75 nC. The -AQ suffix indicates the component is fully AEC-Q101 qualified for automotive applications.
Verify that the ordering suffix matches the required qualification level. The -AQ suffix denotes full AEC-Q101 qualification, while other suffixes may indicate compliance only. Confirm the specific datasheet version and revision date before finalizing procurement specifications to ensure alignment with current manufacturing standards.
Select this component for designs requiring high current handling in a small footprint. Ensure thermal management strategies account for the specified thermal resistance values. Verify that the operating junction temperature remains within the -55°C to +175°C range during all operational phases to maintain reliability and performance integrity.
This part belongs to Diotec's N-Channel Power MOSFET family designed for commercial and industrial use. The DIxxNxx-PQ series utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The DI080N10PQ variant specifically targets applications needing robust 100V blocking capability with high efficiency.
Check for direct substitutes within the DIxxN10PQ series or equivalent packages from other manufacturers. Ensure replacement parts match the 100V VDSS, 80A ID, and QFN5x6 form factor. Verify AEC-Q101 qualification if automotive grade is required.
The -AQ suffix indicates that the DI080N10PQ-AQ is fully qualified according to the AEC-Q101 automotive standard.
Yes, the DI080N10PQ-AQ is avalanche rated with a single pulse avalanche energy (EAS) of 144 mJ.