DI0A4N45SQ2

Overview

The DI0A4N45SQ2 is a dual N-channel power MOSFET in an SO-8 package. It features a drain-source voltage (VDSS) of 450 V and a continuous drain current (ID) of 0.40 A at 25°C. The on-state resistance (RDS(on)) is typically 4.1 Ω with a maximum of 4.5 Ω at VGS = 10 V. Power dissipation is rated at 2 W, with a junction temperature range of -55°C to +150°C. Avalanche energy capability is specified at 30 mJ under standard conditions.

Feature Summary

• Dual MOSFET configuration within a low-profile, space-saving SO-8 package
• Standard level gate drive compatibility for efficient switching applications
• Avalanche rated with 100% avalanche testing for enhanced reliability
• Low on-state resistance and fast switching times optimized for power efficiency

Applications

• DC/DC converters
• Power supplies
• DC drives
• Synchronous rectifiers

Procurement Notes

Verify the specific suffix when ordering. The base model represents commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before procurement.

Selection Notes

Select this component for high-voltage applications requiring 450 V blocking capability. Ensure thermal management accommodates the 2 W power dissipation limit. Verify that the 4.5 Ω maximum RDS(on) meets system conduction loss constraints.

Part Context

This device belongs to Diotec Semiconductor's dual N-channel MOSFET portfolio. It utilizes an SO-8 surface-mount case material compliant with UL 94V-0 standards. The product supports SPICE modeling and includes STEP files for integration into electronic design workflows.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.