DI100N04D1

DI100N04D1

$0.43
  • Description:MOSFET DPAK N 40V 100A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:f981a2afc2c4 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET DPAK N 40V 100A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:143 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):83.3W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI100N04D1

Overview

The DI100N04D1 is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-state resistance of less than 4 mΩ at VGS = 10 V. Key electrical parameters include a maximum power dissipation of 83.3 W, a peak drain current of 450 A, and a single pulse avalanche energy rating of 164 mJ. The component supports a junction temperature range from -55°C to +175°C.

Feature Summary

  • Advanced Trench Technology for optimized performance
  • Low on-state resistance and fast switching times
  • Avalanche rated capability for robust operation
  • Logic-level gate drive characteristics

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The base model DI100N04D1 represents the standard commercial or industrial grade version. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes full AEC-Q101 qualification. Confirm these designations match your project's reliability requirements before procurement.

Selection Notes

Select this component for applications requiring high current handling in a compact D-PACK footprint. The low thermal resistance facilitates efficient heat dissipation. Ensure the operating environment stays within the specified -55°C to +175°C junction temperature limits. Consider the avalanche energy rating if inductive load switching is present.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup utilizing advanced trench technology. It is designed for commercial and industrial use, offering a balance of low on-resistance and high current capacity. The TO-252AA package provides a cost-effective solution for surface-mount assembly with adequate thermal performance for moderate power levels.

Replacement Considerations

Check pinout compatibility and package dimensions against alternatives. Verify that substitute parts meet or exceed the 40V VDS, 100A ID, and <4mΩ RDS(on) specifications. Ensure thermal resistance and avalanche ratings are sufficient for the intended application stress conditions.

FAQ

What is the maximum single pulse avalanche energy?

The DI100N04D1 is rated for a single pulse avalanche energy of 164 mJ under specific test conditions.

Does the standard DI100N04D1 have automotive qualification?

No, the standard DI100N04D1 is for commercial/industrial use. Automotive qualification requires the -AQ suffix for AEC-Q101 qualified parts.

DI100N04D1DI100N04D1
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