DI110N03PQ

$0.65

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:967ee957975a Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1860 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：56W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI110N03PQ

Overview

The DI110N03PQ is a single N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN5x6 (TDSON-8 / DFN5060) surface-mount package. It features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 110 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 2.5 mΩ and a power dissipation rating of 35 W. Key electrical parameters include a gate-source threshold voltage ranging from 1.2 V to 2.5 V, a total gate charge of 163 nC, and an avalanche energy capability of 151 mJ. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low profile, space-saving package design
Avalanche rated for robust operation
Fast switching times with low on-state resistance
Compliant with RoHS, REACH, and Conflict Minerals standards

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The base model DI110N03PQ represents the commercial or industrial grade standard version. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes parts undergoing AEC-Q101 qualification. Confirm that the required automotive reliability grade matches the exact suffix on the component marking code 503N15 before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high current handling in a small footprint. The 30V rating and 110A capacity suit low-voltage DC systems. Ensure thermal management accounts for the 35W dissipation limit and the specified thermal resistance values. Verify that the logic-level gate drive requirements align with the 1.2V to 2.5V threshold voltage range for efficient switching control.

Part Context

This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs from Diotec Semiconductor. These devices utilize advanced trench technology to achieve low on-state resistance and fast switching speeds. The series is designed for commercial and industrial use, offering a balance between performance and package size suitable for modern electronic circuit designs.