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Product Detailed Parameters
- Description：MOSFET, POWERQFN 5X6, 40V, 110A,
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2980 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI110N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 110 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of 1.9 mΩ at VGS = 10 V and 2.9 mΩ at VGS = 4.5 V. With a maximum power dissipation of 55.5 W and a junction temperature range up to +175°C, it supports fast switching times and avalanche energy ratings of 123.5 mJ.
Feature Summary
- Low profile, space-saving package design
- Avalanche rated for robust operation
- Fast switching times with low gate charge
- Logic-level gate drive capability
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix -AQ confirms full AEC-Q101 qualification status as distinct from standard compliance. Ensure the ordering code matches the exact package dimensions and thermal characteristics required by your PCB layout. Cross-reference the latest datasheet version for any updates to maximum ratings or recommended operating conditions before finalizing component selection.
Selection Notes
Select this component when high current handling and low conduction losses are critical within a constrained footprint. The logic-level gate threshold allows efficient driving from standard control interfaces. Consider the thermal resistance values and safe operating area curves to ensure adequate heat dissipation under peak load conditions and ambient temperature variations.
Part Context
This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs designed for commercial and industrial applications. The -AQ suffix indicates automotive-grade qualification according to AEC-Q101 standards, ensuring higher reliability compared to standard commercial grades. It utilizes advanced trench technology to achieve superior performance metrics within the same physical envelope.
Replacement Considerations
DI110N04PQ
FAQ
What is the difference between the -Q and -AQ suffixes?
The -Q suffix denotes AEC-Q101 compliant parts, while the -AQ suffix indicates fully AEC-Q101 qualified parts.
Is the DI110N04PQ-AQ rated for avalanche energy?
Yes, the device is avalanche rated with a single pulse avalanche energy (EAS) of 123.5 mJ under specified test conditions.
