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The DI110N06D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, utilizing Advanced Trench Technology. It features a Drain-Source voltage (VDSS) of 65 V and a continuous Drain current (ID) of 110 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 3.2 mΩ at VGS = 10 V. With a power dissipation (PD) of 71 W and a maximum junction temperature (Tjmax) of 150°C, it supports high-performance switching applications. The component is housed in a TO-252AA (D-PACK) package.
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match your reliability requirements before procurement.
Select this component for designs requiring high current handling up to 110 A and low voltage drop below 65 V. Ensure thermal management accommodates the 71 W dissipation rating. Consider the -AQ suffix if automotive-grade validation is necessary for the target application environment.
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It employs a TO-252AA package suitable for surface mount assembly. The device is compliant with RoHS directives and REACH regulations, excluding specific substances as noted in the documentation.
No public substitute part numbers are documented in the provided datasheet.