DI110N15PQ

$3.09

Description：MOSFET PWRQFN 5X6 150V 0.0117OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1ea23606ea0f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET PWRQFN 5X6 150V 0.0117OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：77 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4700 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：56W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI110N15PQ

Overview

The DI110N15PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 150 V and a continuous drain current (ID) of 55 A at TC = 25°C, limited by the package thermal resistance. The device exhibits a maximum on-state resistance (RDS(on)) of 15 mΩ at VGS = 4.5 V and ID = 20 A. Key dynamic parameters include a total gate charge (Qg) of 69 nC and a single-pulse avalanche energy (EAS) rating of 158 mJ. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Logic-level gate drive capability for efficient control
Avalanche rated with 100% avalanche testing
Low profile, space-saving QFN5x6 package design
Fast switching times and low gate charge

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering: standard versions are commercial grade, while suffixes -Q and -AQ denote AEC-Q101 compliance or qualification respectively. Confirm that the required automotive reliability standards align with your application needs before procurement. Ensure the selected variant matches the intended environmental and quality requirements.

Selection Notes

Select this component for high-current applications requiring a 150 V rating within a small footprint. Consider the 55 A continuous drain current limit imposed by the package thermal resistance rather than the silicon chip limit. Evaluate the 15 mΩ maximum RDS(on) against your conduction loss requirements at the expected operating gate voltage.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The QFN5x6 package provides a balance between electrical performance and board space efficiency for modern power electronics designs.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet the 150 V VDSS and 55 A ID requirements. Ensure the replacement supports the same logic-level gate drive voltages if direct pin-to-pin interchangeability is required.

FAQ

What is the difference between the standard DI110N15PQ and the -AQ suffix?

The standard version is for commercial/industrial applications. The -AQ suffix indicates the part is fully qualified under the AEC-Q101 automotive standard.