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Product Detailed Parameters
- Description：MOSFET POWERQFN 5X6 N 65V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4130 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：63.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI114N06PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 package. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 114 A at TC = 25°C. The device has a maximum on-state resistance (RDS(on)) of 3.0 mΩ at VGS = 10 V and ID = 30 A. Power dissipation (PD) is rated at 63.8 W at TC = 25°C. The junction temperature range spans from -55°C to +150°C. Single pulse avalanche energy (EAS) is 185 mJ.
Feature Summary
- Low profile, space-saving package design
- Avalanche rated capability
- Fast switching times with low gate charge
- Standard level gate drive
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance. Suffix -AQ indicates AEC-Q101 qualification. Confirm these details against the official datasheet before procurement to ensure the correct reliability grade for the application.
Selection Notes
Select this component for applications requiring high current handling in a compact footprint. The 65V rating suits low-voltage DC systems. Evaluate thermal management requirements based on the 63.8W power dissipation limit. Consider the avalanche energy rating if inductive load switching is present. Ensure gate drive voltages align with the standard level gate drive specifications.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It utilizes a QFN5x6 case material compliant with UL 94V-0 standards. The device is Pb-free and RoHS compliant. It is supplied in taped and reeled packaging, typically 5000 units per 13-inch reel.
Replacement Considerations
Check for DI114N06PQ-AQ or DI114N06PQ-Q variants if automotive-grade reliability is required. Verify pinout compatibility with existing designs. Compare RDS(on) and thermal resistance values against potential substitutes to ensure equivalent performance under operating conditions.
