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The DI280N10TL is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TOLL (~HSOF-8) package. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 280 A at TC = 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 2 mΩ at VGS = 10 V and ID = 50 A. Key electrical parameters include a gate-source threshold voltage (VGS(th)) ranging from 2.3 V to 4.2 V, a total gate charge (Qg) of 122 nC, and a single-pulse avalanche energy rating (EAS) of 1225 mJ. Thermal performance includes a junction-to-case thermal resistance (RthJC) below 0.35 K/W and a maximum junction temperature (Tj) of 175°C.
Verify the specific ordering suffix when procuring. The base model DI280N10TL represents the commercial/industrial grade standard version. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the required reliability grade matches the application environment before finalizing orders.
Select this component for high-current applications requiring low conduction losses within a 100 V system. Ensure the design accommodates the 280 A continuous current limit at case temperatures of 25°C. Evaluate thermal management strategies given the 425 W power dissipation rating and the requirement for adequate copper pad areas to maintain safe operating temperatures under load.
This part belongs to Diotec's lineup of N-Channel Power MOSFETs utilizing advanced trench technology. It is designed for robust performance in industrial and commercial environments. The TOLL package provides a compact footprint with enhanced thermal dissipation capabilities compared to traditional surface mount packages, suitable for high-power density designs.
No public confirmed substitute part numbers are documented in the provided datasheet.