DI2A2N100D1K

$1.73

Description：MOSFET, DPAK, N-CH, 1000V, 2.2A
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a7798c594f5d Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET, DPAK, N-CH, 1000V, 2.2A
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI2A2N100D1K

Overview

The DI2A2N100D1K is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a Drain-Source voltage of 1000 V and a continuous drain current of 2.2 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 6.8 Ω at VGS = 10 V. Key electrical parameters include a gate-source threshold voltage ranging from 3 V to 4 V, a peak drain current of 25 A, and a power dissipation capacity of 30 W. Thermal characteristics specify a junction-to-case thermal resistance of 4.2 K/W and a junction-to-ambient resistance of 63 K/W. The component supports a maximum junction temperature of 150°C and includes avalanche energy ratings.

Feature Summary

High Drain-Source voltage capability for high-voltage applications
ESD-protected Gate structure
Low on-state resistance for efficient conduction
Fast switching times with avalanche rating

Applications

Power Supplies
Power Factor Correction (PFC)
High Voltage DC Drives
Battery Management Systems (BMS)

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details regarding substance 7a-I if required by your supply chain standards. Ensure the procurement matches the exact marking code 100N6K8 or type designation to avoid substitution errors.

Selection Notes

Select this component for designs requiring high breakdown voltage combined with moderate current handling in a surface-mount D-PACK footprint. Evaluate the 6.8 Ω maximum RDS(on) against thermal constraints, as it dictates conduction losses. Consider the 125 mJ avalanche energy rating for inductive load switching scenarios. Verify that the 3 V to 4 V threshold voltage aligns with your driver logic levels for reliable turn-on.

Part Context

This part belongs to Diotec's high-voltage N-Channel MOSFET portfolio, designed for general-purpose power switching. It utilizes silicon technology within a lead-free, halogen-free TO-252AA casing. The product line targets efficiency improvements in power conversion stages. The datasheet specifies standard commercial reliability, distinct from automotive grades available via specific suffixes.