DI5A0N60D1-AQ

$0.52

Description：DI5A0N60D1-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:a5efa22a9436 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI5A0N60D1-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：880mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：307 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI5A0N60D1-AQ

Overview

The DI5A0N60D1-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, utilizing Super Junction Technology. It features a Drain-Source voltage (VDSS) of 600 V and a continuous Drain current (ID) of 5.0 A at 25°C. The device has a maximum on-state resistance (RDS(on)) of 880 mΩ at VGS = 10 V and ID = 2.5 A. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 45 W. The component is housed in a TO-252AA (D-PACK) package and includes avalanche rating capabilities.

Feature Summary

Super Junction Technology for low on-state resistance
ESD-protected Gate structure
Avalanche rated capability
Fast switching times

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the suffix -AQ indicates the component is currently undergoing AEC-Q101 qualification rather than holding full certification. Confirm compliance with RoHS exemptions and REACH regulations. Ensure the ordering quantity matches the standard tape and reel packaging of 2500 units per 13-inch reel. Check for any specific export control requirements under German Federal Office regulations before finalizing procurement.

Selection Notes

Select this component for commercial and industrial grade applications requiring high-voltage handling up to 600 V. Consider its thermal characteristics, specifically the RthJA of 50 K/W, for heat management in compact designs. Evaluate the gate charge and switching speeds against system efficiency targets. Ensure the design accommodates the specified peak drain current limits during transient operations.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for general-purpose power switching. It represents a standard commercial/industrial grade offering, distinct from specialized automotive or high-reliability variants. The device integrates robust protection features suitable for demanding electronic environments.