DI5A7N65D1K-AQ

$2.01

Description：MOSFET, DPAK, 650V, 5.7A, 150C,
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e0b560115fd4 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET, DPAK, 650V, 5.7A, 150C,
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：430mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：722 pF @ 325 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI5A7N65D1K-AQ

Overview

The DI5A7N65D1K-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-voltage switching applications. It features a Drain-Source voltage (VDSS) of 650 V and a continuous Drain current (ID) of 5.7 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 0.43 Ω at VGS = 10 V. With a maximum power dissipation of 36 W and a junction temperature range up to 150°C, it supports avalanche energy ratings of 45 mJ. The component is housed in a TO-252AA (D-PACK) package.

Feature Summary

High Drain-Source voltage rating suitable for demanding power environments
ESD-protected gate structure for enhanced reliability
Low on-state resistance to minimize conduction losses
Fast switching times optimized for efficient power conversion

Applications

Power Supplies
Power Factor Correction (PFC)
High Voltage DC Drives
Battery Management Systems (BMS)

Procurement Notes

Verify the specific suffix designation when ordering. The -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm that this status aligns with your project's automotive grade requirements before finalizing procurement plans.

Selection Notes

Select this component for designs requiring robust 650 V blocking capability with moderate current handling. Ensure thermal management strategies account for the specified thermal resistance values. Verify that the gate drive circuitry can support the required threshold voltages and charge characteristics for optimal switching performance.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, specifically engineered for commercial and industrial grade applications. The product line emphasizes high breakdown voltages and low on-resistance to improve efficiency in power electronics systems.