DI9400T

$1.09

Description：MOSFET P-CH 30V 3.4A 8-SOP
Series：*
Mfr：Diodes Incorporated
Package：Cut Tape (CT)

SKU:e35dcda49686 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.4A 8-SOP
Series：*
Mfr：Diodes Incorporated
Package：Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DI9400T

Overview

The DI9400 is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes high cell density DMOS technology and is housed in an SO-8 plastic case. The device supports a drain-source voltage of -30 V and a gate-source voltage of ±20 V. Continuous drain current reaches ±3.4 A, with pulsed capability up to ±10 A. Maximum power dissipation varies from 1.0 W to 2.5 W depending on the copper mounting pad area. Operating temperature ranges from -55°C to +150°C.

Feature Summary

High cell density DMOS technology for lower on-state resistance
Fast switching speed and high transient tolerance
High power and current capability

Applications

Procurement Notes

Verify the component against the official datasheet DS11502 Rev. F-4 to confirm authenticity. Ensure the package matches the specified SO-8 dimensions. Check that electrical parameters align with the provided specifications. Confirm compliance with relevant environmental standards before integration into designs.

Selection Notes

Select this component for applications requiring a P-channel MOSFET with a -30 V rating. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate threshold voltage requirements against the driving circuit capabilities. Assess the power dissipation limits based on the expected PCB copper area.

Part Context

This part belongs to the family of single P-channel enhancement mode field effect transistors produced by Diodes Incorporated. It is designed for general-purpose switching applications where moderate current handling and fast switching are required. The SO-8 package provides a compact solution for surface mount assembly.