DID3A2N65

$0.53

Description：MOSFET IPAK N 650V 3.2A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:7da602d6681f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET IPAK N 650V 3.2A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：581 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：54W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

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DID3A2N65

Overview

The Diotec Semiconductor DID3A2N65 is an N-Channel Power MOSFET housed in a TO-251 (I-PAK) package. It features a drain-source voltage rating of 650 V and a continuous drain current of 3.2 A at 25°C, dropping to 2 A at 100°C. The device exhibits a maximum on-state resistance of 2.6 Ω at VGS = 10 V and ID = 2 A. Key dynamic parameters include a total gate charge of 25 nC, turn-on delay of 45 ns, and fall time of 130 ns under specified test conditions. It supports a single pulse avalanche energy of 180 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated capability
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial or industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm mechanical data regarding tube/cardboard packing and soldering conditions before integration. Ensure design accounts for thermal resistance limits and power dissipation derating curves provided in the official documentation.

Selection Notes

Select this component for high-voltage applications requiring robust avalanche performance. The 650 V rating suits demanding DC bus environments. Evaluate thermal management needs based on the 54 W power dissipation limit at 25°C case temperature. Consider the 2.6 Ω RDS(on) for conduction loss calculations. Verify if automotive-grade AEC-Q101 compliance is required for the target application environment.

Part Context

This part belongs to Diotec's discrete semiconductor portfolio, specifically within their N-Channel Power MOSFET line. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The TO-251 package provides a compact solution suitable for surface-mount assembly in various electronic circuits.