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Product Detailed Parameters
- Description：SIC MOSFET, TO-247-4L, N, 120A,
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：22.3mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id：4V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs：269 nC @ 18 V
- Vgs (Max)：+18V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：4817 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：340W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The DIF120SIC022 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, housed in a TO-247-4L package. It features a drain-source voltage of 1200 V and a continuous drain current of 120 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 22.3 mΩ at 25°C and 28 mΩ at 175°C. Power dissipation reaches 580 W at 25°C. Operating junction temperatures range from -55°C to +175°C. Dynamic characteristics include a total gate charge of 269 nC and turn-on energy of 2.1 mJ under standard test conditions.
Feature Summary
- Kelvin source connection for fast switching and reduced noise level at the gate
- Avalanche rated capability with low on-state resistance
- Wide bandgap SiC material providing large clearance and creepage distances
- Low gate charge and fast switching times
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the suffix designation carefully during procurement. The '-AQ' suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm that the specific batch meets your project's reliability requirements before finalizing orders, as automotive-grade status differs from standard commercial or industrial grades.
Selection Notes
Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. The TO-247-4L package with a Kelvin source is optimal for minimizing gate loop inductance. Ensure thermal management design accounts for the 580 W power dissipation rating at 25°C case temperature. Verify that the 1200 V breakdown voltage exceeds the maximum circuit voltage with appropriate safety margins.
Part Context
This part belongs to Diotec's Silicon Carbide MOSFET series designed for commercial and industrial grade applications. The 'DIF' prefix typically denotes the TO-247-4L package variant featuring a fourth Kelvin source lead. This distinguishes it from other series like DIW which may use different pin configurations or lack the dedicated Kelvin source for enhanced switching performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching key parameters such as 1200 V rating, 120 A current capacity, and RDS(on) specifications.
