DIJ4A5N65

$0.34

Description：MOSFET ITO-220AB N 650V 4.5A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:ccee4cc321d8 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET ITO-220AB N 650V 4.5A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1080 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：46W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ITO-220F
Package / Case：TO-220-3 Full Pack

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DIJ4A5N65

Overview

The DIJ4A5N65 is an N-Channel Power MOSFET from Diotec Semiconductor, designed for commercial and industrial applications. It features a 650 V drain-source voltage rating and operates with a continuous drain current of 7 A at 25°C case temperature, reducing to 4.5 A at 100°C. The device utilizes advanced trench technology to achieve a low on-state resistance of 1.3 Ω maximum. Key electrical parameters include a power dissipation capacity of 46 W, a single pulse avalanche energy rating of 281 mJ, and a maximum junction temperature of 150°C.

Feature Summary

Advanced Trench Technology
Low On-State Resistance
Fast Switching Times
Low Gate Charge
Avalanche Rated

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is suitable for commercial and industrial grade requirements. Suffix -Q indicates compliance with AEC-Q101 standards, while suffix -AQ denotes qualification in progress. Confirm package type and marking details against the latest official datasheet before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high-voltage handling up to 650 V with moderate current capabilities. The low thermal resistance facilitates efficient heat transfer from the junction to the case. Ensure adequate cooling solutions are implemented to maintain the junction temperature within the specified operating range during continuous operation.

Part Context

This part belongs to Diotec's lineup of N-Channel Power MOSFETs utilizing advanced trench technology. It is housed in an ITO-220 package, providing a robust mechanical structure for through-hole mounting. The device is compliant with RoHS directives and REACH regulations, excluding specific substances as noted in the documentation.