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Product Detailed Parameters
- Description：DIT080N08
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：85 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3742 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DIT080N08 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a TO-220AB package with a Drain-Source voltage (VDSS) of 85 V and a continuous drain current (ID) of 80 A at TC = 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 4.8 mΩ at VGS = 10 V and ID = 50 A. It supports a power dissipation (PD) of 62.5 W at 25°C case temperature and has a junction temperature range of -55°C to +150°C. Single pulse avalanche energy (EAS) is rated at 144 mJ.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Fast switching times with low gate charge
- Avalanche rated capability
- Compliant to RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is intended for commercial and industrial grade use. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes parts in AEC-Q101 qualification. Confirm the required grade matches the application's reliability standards before procurement.
Selection Notes
Select this component for high-current switching applications requiring low conduction losses. Ensure the thermal design accommodates the specified power dissipation limits at the operating case temperature. Verify that the gate drive voltage meets the requirements for optimal RDS(on) performance. Consider the avalanche rating if inductive load switching is present.
Part Context
DIT080N08 belongs to Diotec Semiconductor's N-Channel Power MOSFET family. These devices utilize advanced trench technology to achieve low on-state resistance and fast switching speeds. The product line includes variants compliant with automotive standards for specialized applications.
Replacement Considerations
Check for suffix variations such as -Q or -AQ which indicate different qualification levels. No direct substitute part numbers are confirmed in the provided documentation.
