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The DIT090N06 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-220AB package. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 90 A at 25°C case temperature. The device exhibits a typical on-state resistance (RDS(on)) of 5.7 mΩ at VGS = 10 V and ID = 30 A. Maximum power dissipation (PD) is rated at 160 W at 25°C. The component supports a junction temperature range from -55°C to +175°C and includes avalanche energy ratings of 450 mJ.
Verify the specific ordering suffix when procuring. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before purchase.
Select this component for high-current applications requiring low conduction losses. Ensure adequate thermal management is provided, as power dissipation is measured at the heat flange. Verify that the operating voltage remains within the 65 V limit and consider the 90 A continuous current rating based on the expected case temperature conditions.
This part belongs to Diotec's discrete semiconductor portfolio, specifically designed for power electronics. It utilizes advanced trench technology to achieve high performance in a standard through-hole package suitable for industrial and commercial-grade electronic devices.
No public confirmed substitute part numbers are available in the source material.
The DIT090N06 has a single pulse avalanche energy rating of 450 mJ.
Yes, versions with the suffix -Q are AEC-Q101 compliant, and versions with the suffix -AQ are AEC-Q101 qualified.