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Product Detailed Parameters
- Description：MOSFET TO220AB N 80V 0.0066OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：109 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：170W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DIT095N08 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-efficiency power switching applications. It features a Drain-Source voltage (VDSS) of 80 V and a continuous Drain current (ID) of 95 A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-state resistance (RDS(on)) of approximately 6.6 mΩ at VGS = 10 V. With a maximum power dissipation (PD) of 170 W and a junction temperature range up to 175°C, it supports robust thermal performance. Key dynamic characteristics include a total gate charge (Qg) of 109 nC and avalanche energy rating of 529 mJ.
Feature Summary
- Advanced Trench Technology for optimized performance
- Low on-state resistance to minimize conduction losses
- Fast switching times with low gate charge
- Avalanche rated capability for rugged operation
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific ordering suffix when procuring. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm package type TO-220AB and ensure compatibility with RoHS, REACH, and conflict mineral regulations during sourcing.
Selection Notes
Select this component for designs requiring high current handling in low-voltage environments. The 80 V rating suits 48 V or similar bus systems. Evaluate thermal management requirements based on the 170 W dissipation limit and RthJC of less than 0.88 K/W. Consider the 320 A peak drain current for transient load conditions.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET portfolio, utilizing silicon planar technology. It is housed in a TO-220AB package suitable for through-hole mounting. The product line targets industrial and consumer electronics where efficiency and reliability are critical.
Replacement Considerations
Check for direct substitutes within the same VDSS and ID ratings. Verify pinout compatibility and thermal resistance values. Ensure replacement parts meet the same electrical specifications for RDS(on), Qg, and avalanche energy.
FAQ
What is the maximum single pulse avalanche energy?
The DIT095N08 is rated for a single pulse avalanche energy of 529 mJ under test conditions of VDD = 40 V, VG = 10 V, L = 0.5 mH, and RG = 25 Ω.
Does the standard version meet automotive standards?
No, the standard DIT095N08 is commercial/industrial grade. Automotive qualification requires specific suffixes: -Q for AEC-Q101 compliant and -AQ for AEC-Q101 qualified.
