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Product Detailed Parameters
- Description：MOSFET TO220AB N 80V 0.0049OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：163 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：220W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DIT120N08 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-current applications. It features a Drain-Source voltage (VDSS) of 80 V and a continuous Drain current (ID) of 120 A at 25°C case temperature. The device exhibits a typical on-state resistance (RDS(on)) of 4.9 mΩ at VGS = 10 V and ID = 40 A. With a power dissipation rating of 220 W and a maximum junction temperature of 175°C, it supports robust thermal performance. Key dynamic characteristics include a total gate charge of 163 nC and single pulse avalanche energy capability of 1400 mJ.
Feature Summary
- Advanced Trench Technology for low on-state resistance and fast switching times
- Avalanche rated with high single pulse avalanche energy capability
- Low gate charge to minimize switching losses
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm package type and marking requirements against your design specifications before finalizing orders.
Selection Notes
Select this component for designs requiring high current handling up to 120 A and low conduction losses indicated by the 4.9 mΩ RDS(on). Ensure adequate heat sinking is provided to maintain junction temperatures within the specified range during operation. Consider the avalanche energy rating if inductive load switching is present.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET portfolio, utilizing advanced trench technology. It is housed in a TO-220AB package. The product line includes variants with different automotive qualifications to meet diverse reliability standards across industrial and consumer electronics sectors.
Replacement Considerations
Check for suffix variations (-Q or -AQ) which denote specific automotive qualifications. Verify pinout compatibility and thermal resistance values when substituting with other 80V, 120A MOSFETs from different manufacturers.
