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The DIW012N65 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-247 package. It features a drain-source voltage (VDSS) of 650 V and a continuous drain current (ID) of 12 A at 25°C case temperature. The device has a maximum power dissipation (PD) of 125 W and a low on-state resistance (RDS(on)) of less than 190 mΩ at VGS = 10 V. It supports a peak drain current of 60 A and operates within a junction temperature range of -55°C to +150°C. The component is avalanche rated with a single pulse avalanche energy (EAS) of 988 mJ.
Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match your application's reliability requirements before finalizing orders.
Select this component for designs requiring high voltage blocking capability up to 650 V. Ensure thermal management strategies account for the 125 W power dissipation rating at 25°C case temperature. Consider the TO-247 package dimensions for PCB layout and heatsinking compatibility.
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The device is designed for robust operation in standard commercial and industrial environments.
No public confirmed substitute part numbers are available in the provided documentation.