DIW012N65

DIW012N65

$1.70
  • Description:MOSFET TO-247-3L N 650V 12A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:a86242b79356 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET TO-247-3L N 650V 12A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:190mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1479 pF @ 34 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

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DIW012N65

Overview

The DIW012N65 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-247 package. It features a drain-source voltage (VDSS) of 650 V and a continuous drain current (ID) of 12 A at 25°C case temperature. The device has a maximum power dissipation (PD) of 125 W and a low on-state resistance (RDS(on)) of less than 190 mΩ at VGS = 10 V. It supports a peak drain current of 60 A and operates within a junction temperature range of -55°C to +150°C. The component is avalanche rated with a single pulse avalanche energy (EAS) of 988 mJ.

Feature Summary

  • Advanced Trench Technology for optimized performance
  • Low on-state resistance and gate charge for efficiency
  • Fast switching times suitable for high-frequency applications
  • Avalanche rated with 100% avalanche testing

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Power Tools

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match your application's reliability requirements before finalizing orders.

Selection Notes

Select this component for designs requiring high voltage blocking capability up to 650 V. Ensure thermal management strategies account for the 125 W power dissipation rating at 25°C case temperature. Consider the TO-247 package dimensions for PCB layout and heatsinking compatibility.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The device is designed for robust operation in standard commercial and industrial environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

DIW012N65DIW012N65
$1.70
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