DIW038N65K

$3.11

Description：DIW038N65K
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:98ae11bd5727 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：DIW038N65K
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：101 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4884 pF @ 350 V
FET Feature：-
Power Dissipation (Max)：192W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Download product information

DIW038N65K

Overview

The DIW038N65K is an N-Channel Power MOSFET in a TO-247 package. It features a drain-source voltage (VDSS) of 650 V and a continuous drain current (ID) of 38 A at 25°C case temperature, dropping to 24 A at 100°C. The on-state resistance (RDS(on)) is typically 53 mΩ with a maximum of 65 mΩ at VGS = 10 V. Power dissipation reaches 192 W at 25°C. The device supports a peak drain current of 160 A and has a single pulse avalanche energy rating of 1567 mJ. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

ESD protected gate structure
Advanced trench technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated and 100% avalanche tested

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when procuring. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details under category 7a-I if required by your supply chain standards. Ensure thermal management aligns with the specified RthJC and power derating curves.

Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability. The TO-247 package facilitates effective heat dissipation for power levels up to 192 W. Consider the 65 mΩ maximum RDS(on) for conduction loss calculations. Verify that the 650 V breakdown voltage exceeds the circuit's peak transient voltages. Check gate threshold voltage requirements against your driver output levels.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The device is designed for standard commercial and industrial applications, offering reliability through 100% avalanche testing.