DIW120SIC028

$26.21

Description：SIC MOSFET, TO-247-3L, N, 118A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:aa41a8f1f9bc Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-3L, N, 118A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：28mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：4V @ 25mA
Gate Charge (Qg) (Max) @ Vgs：373 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：5691 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：715W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW120SIC028

Overview

The DIW120SIC028 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, designed for high-power switching applications. It features a TO-247-3L package and supports a drain-source voltage of 1200 V with a continuous drain current of 100 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 27.4 mΩ at 25°C and 30 mΩ at 175°C. Power dissipation reaches 517 W at 25°C, while the junction temperature range spans from -55°C to +175°C. Peak drain current capability is rated at 300 A.

Feature Summary

Advanced planar technology ensures low on-state resistance and fast switching times.
Avalanche rated and subjected to 100% avalanche testing for enhanced reliability.
Low gate charge characteristics facilitate efficient drive requirements.
Compliant with RoHS, REACH, and Conflict Minerals regulations.

Applications

DC/DC Converters
Power Supplies
DC Drives
Charging Stations
Inverters

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial or industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm package type and thermal parameters match your design constraints before finalizing orders.

Selection Notes

Select this component for high-voltage applications requiring low conduction losses. The TO-247-3L package suits through-hole mounting. Evaluate thermal management needs based on the 0.29 K/W junction-to-case resistance. Ensure gate drive voltages remain within the specified -8 V to +22 V range for optimal performance.

Part Context

This part belongs to Diotec's Silicon Carbide MOSFET portfolio, utilizing wide-bandgap technology for superior efficiency compared to silicon alternatives. The series targets modern power electronics demanding higher breakdown voltages and reduced energy loss during switching operations.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

What is the maximum repetitive peak off-state voltage?

The Drain-Source voltage (VDSS) is rated at 1200 V.

Is the device suitable for automotive applications?

Standard versions are commercial/industrial grade. Automotive suitability requires verifying the -Q (compliant) or -AQ (qualified) suffixes against AEC-Q101 standards.