DIW170SIC049

$14.48

Description：SIC MOSFET, TO-247-3L, N, 67A, 1
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:9f3e2117a2f7 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-3L, N, 67A, 1
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：49mOhm @ 40A, 18V
Vgs(th) (Max) @ Id：4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：179 nC @ 18 V
Vgs (Max)：+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds：3046 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW170SIC049

Overview

The DIW170SIC049 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, designed for high-power applications. It features a drain-source breakdown voltage of 1700 V and a continuous drain current of 67 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 49 mΩ at 25°C and 81 mΩ at 175°C. With a power dissipation rating of 357 W and a junction temperature range up to 175°C, it supports efficient thermal management in demanding environments.

Feature Summary

Advanced planar technology ensures low on-state resistance and fast switching times.
Avalanche rated with 100% avalanche testing for enhanced ruggedness.
Low gate charge facilitates efficient driver requirements.
Compliant with RoHS, REACH, and Conflict Minerals regulations.

Applications

DC/DC Converters
Power Supplies
DC Drives
Charging Stations
Inverters

Procurement Notes

Verify the specific suffix when ordering: standard commercial grade, -Q for AEC-Q101 compliant, or -AQ for AEC-Q101 qualified versions. Confirm package type TO-247 and check for updated datasheet revisions before finalizing designs. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability.

Selection Notes

Select this component for high-voltage systems requiring low conduction losses and robust avalanche capability. Evaluate thermal resistance parameters against your heatsinking strategy. Consider the -Q or -AQ suffixes if automotive reliability standards are mandatory for the target application environment.

Part Context

This SiC MOSFET belongs to Diotec's portfolio of wide-bandgap semiconductors aimed at improving efficiency in power electronics. It utilizes advanced planar technology to minimize on-resistance while maintaining high blocking voltages suitable for industrial and commercial-grade power conversion systems.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum recommended gate-source voltage?

The recommended gate-source voltage range is -4 V to +18 V, while the absolute maximum rating extends to -8 V to +22 V.

Is the DIW170SIC049 suitable for automotive applications?

Standard versions are for commercial/industrial use. Versions with the -Q suffix are AEC-Q101 compliant, and -AQ suffix versions are fully qualified under AEC-Q101.