DMB53D0UDW-7

Overview

DMB53D0UDW-7 is a dual-transistor array in SOT-363 packaging, integrating one NPN bipolar junction transistor and one N-channel enhancement-mode MOSFET. The NPN section supports a collector-emitter voltage of 45V with a continuous current of 100mA. The N-channel MOSFET provides a drain-source breakdown voltage of 50V and handles up to 160mA. Designed for surface-mount assembly, the component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and N-channel MOSFET devices in a single compact package
• Provides independent control for switching and amplification applications
• Supports surface-mount technology for automated PCB assembly

Applications

• General-purpose switching circuits
• Driver stages for low-power loads
• Signal conditioning modules

Procurement Notes

Verify the specific revision level against the manufacturer's latest datasheet before integration. Confirm that the SOT-363 pinout matches the target schematic, as variations exist within the DMB53 family. Ensure thermal management strategies account for the combined power dissipation of both internal transistors under maximum load conditions.

Selection Notes

Select this component when space constraints require combining discrete NPN and NMOS functions. It serves as a direct replacement for designs previously using separate components. Evaluate the 160mA MOSFET limit against peak load requirements. Verify that the 45V NPN rating exceeds the maximum circuit voltage spikes.

Part Context

The DMB53 series represents Diodes Incorporated's portfolio of mixed-signal transistor arrays. These components consolidate multiple semiconductor functions into small footprints, reducing board area and interconnect complexity. The DMB53D0UDW-7 specifically targets cost-sensitive consumer electronics and portable devices requiring efficient power management.

FAQ

Is the DMB53D0UDW-7 RoHS compliant?

Yes, the component complies with RoHS3 specifications.

What is the maximum operating junction temperature?

The device supports a maximum junction temperature of +150°C.