DMC2020USD-13

$1.00

Description：MOSFET N/P-CH 20V 7.8A/6.3A 8SO
Series：-

SKU:758c5e3a5359 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 7.8A/6.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.8A, 6.3A
Rds On (Max) @ Id, Vgs：20mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1149pF @ 10V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

Download product information

DMC2020USD-13

Overview

The DMC2020USD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOIC-8 package. The N-channel unit provides a maximum drain-source voltage of 20V, with a typical on-resistance of 20mΩ at VGS=4.5V and a continuous drain current of 8.5A. The P-channel unit offers a -20V breakdown voltage, a typical on-resistance of 33mΩ at VGS=-4.5V, and a continuous source current of -6.8A. Both devices operate across a temperature range of -55°C to +150°C.

Feature Summary

Integrates two discrete transistors into a single surface-mount package to reduce circuit board footprint.
Optimized for low gate drive requirements and fast switching speeds.
Includes internal gate protection diodes providing electrostatic discharge protection up to 2kV.
Constructed using lead-free materials that are fully RoHS compliant and free from halogens and antimony.

Applications

Motor control circuits
DC-DC converters
Power management functions
Notebook computers and printers

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code C2020UD against official datasheet specifications. Confirm the suffix -13 indicates the standard reel packaging format. Ensure compliance with environmental directives such as RoHS 3 and verify the absence of intentionally added lead or restricted substances before final integration.

Selection Notes

Select this component when space constraints require combining N-channel and P-channel switching capabilities in one footprint. Evaluate thermal resistance values based on specific PCB copper coverage and airflow conditions. Consider the gate threshold voltage variations and total gate charge requirements to ensure compatibility with the intended driver logic levels.

Part Context

This part belongs to the DMC series of complementary MOSFETs designed for high-efficiency power management. It serves as a compact alternative to using separate discrete N-channel and P-channel transistors. The product is qualified to JEDEC standards for high reliability and is suitable for general-purpose commercial applications.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters if substituting with other complementary MOSFET pairs from different manufacturers.