DMC25D0UVT-13

$0.11

Description：MOSFET N/P-CH 25V/30V TSOT23
Series：-

SKU:b02a7f8071b1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 25V/30V TSOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：25V, 30V
Current - Continuous Drain (Id) @ 25°C：400mA, 3.2A
Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：26.2pF @ 10V
Power - Max：1.2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-23-6
Grade：-
Qualification：-

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DMC25D0UVT-13

Overview

The DMC25D0UVT-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The N-channel transistor provides a drain-source voltage of 25V, a continuous drain current of 0.4A at VGS=4.5V, and a maximum on-resistance of 4Ω. The P-channel transistor offers a drain-source voltage of -30V, a continuous drain current of -3.2A at VGS=-10V, and a maximum on-resistance of 80mΩ at VGS=-12V. The component operates across a temperature range of -55°C to +150°C with a power dissipation rating of 1.2W.

Feature Summary

Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a single compact package
Low on-state resistance for high efficiency power management applications
Fast switching speed combined with low input capacitance
ESD protected gate structure on the N-channel device exceeding 6kV Human Body Model rating

Applications

DC-DC Converters
Power Management Functions
Load Switch

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration specified in the official datasheet. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the specific application environment.

Selection Notes

Select this component when space-constrained designs require both N-channel and P-channel switching capabilities. Ensure the gate drive voltage aligns with the specified thresholds; the P-channel device achieves optimal performance at VGS=-12V, while the N-channel device is rated for VGS=4.5V.

Part Context

This part belongs to the DMC25 series of complementary MOSFETs from Diodes Incorporated. It utilizes the TSOT26 case style, which is a molded plastic package designed for surface mount technology. The device is lead-free, fully RoHS compliant, and halogen-free.

Replacement Considerations

The DMC25D0UVT-7 is a verified substitute offering identical electrical characteristics but packaged in a 3000-unit tape and reel format instead of the 10000-unit configuration.