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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 1.1A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta), 800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V, 49pF @ 16V
- Power - Max：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC2710UVQ-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SOT563 package. The N-channel transistor (Q1) supports a drain-source voltage of 20V with a maximum continuous drain current of 1.1A at +25°C, while the P-channel transistor (Q2) provides -20V breakdown and -0.8A current capability. Both channels feature low on-state resistance and fast switching speeds, making them suitable for high-efficiency power management applications.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated in a single ultra-small surface mount package
- Low gate threshold voltage below 1V for both channels to facilitate efficient drive control
- ESD protected gate structure designed to minimize input/output leakage currents
- Qualified for automotive applications meeting AEC-Q101 standards and PPAP requirements
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications. Ensure the selected packaging quantity aligns with production needs and validate the manufacturing facility certifications if automotive application standards are mandatory.
Selection Notes
Evaluate the thermal resistance characteristics under steady-state conditions when designing the circuit layout. Consider the junction-to-ambient thermal resistance values provided for different mounting configurations on FR-4 substrates. Verify that the gate-source voltage limits remain within the specified ±6V range during operation to prevent device damage.
Part Context
This component belongs to the DMC series of advanced complementary MOSFETs from Diodes Incorporated. It is specifically engineered to minimize on-state resistance while maintaining superior switching performance. The product utilizes a green molding compound and features matte tin annealed terminals over a copper leadframe for solderability.
Replacement Considerations
The datasheet lists the DMC2710UVQ-7 as an alternative packing option within the same part family. No other cross-model substitutes or direct replacements are documented in the official specifications.
