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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 1.1A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta), 800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V, 49pF @ 16V
- Power - Max：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC2710UVQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 provides a drain-source voltage of 20V, with a maximum on-resistance of 0.4Ω at VGS=4.5V and a continuous drain current of 1.1A at +25°C. Q2 offers a -20V rating, with a maximum on-resistance of 0.7Ω at VGS=-4.5V and a continuous drain current of -0.8A at +25°C. The devices operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration for simplified circuit design
- Low on-resistance optimized for high-efficiency power management
- Low gate threshold voltage enabling operation with low logic levels
- Fast switching speed supported by low input capacitance
- ESD protected gates for enhanced reliability
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm AEC-Q101 qualification status if automotive compliance is required. Ensure the selected component matches the exact pinout and thermal characteristics defined in the datasheet for the intended PCB layout.
Selection Notes
Select this component for applications requiring a compact complementary switch solution. Evaluate the on-resistance values at the specific operating gate voltages to ensure adequate drive capability. Consider the thermal resistance parameters when designing heat dissipation strategies for the SOT563 package under steady-state or pulsed load conditions.
Part Context
This part belongs to Diodes Incorporated's advanced information MOSFET portfolio. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is suitable for automotive applications requiring specific change control and is manufactured in IATF 16949 certified facilities.
Replacement Considerations
Check for direct substitutes such as the DMC2710UDWQ-7, noting differences in package type (SOT-363 vs SOT563) and electrical ratings. Verify pin compatibility and thermal performance before substituting.
