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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.48A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：480mA (Ta), 350mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 4.5V, 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：21.5pF @ 16V, 17pF @ 15V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X2-DFN0806-6
- Grade：-
- Qualification：-
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Overview
The DMC2991UDA-7B is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single X2-DFN0806-6 package. The N-channel transistor provides a maximum drain-source voltage of 20V, with a continuous drain current of 480mA at +25°C and a maximum on-resistance of 0.99Ω at VGS = 4.5V. The P-channel counterpart offers a -20V breakdown voltage, a continuous drain current of -350mA at +25°C, and a maximum on-resistance of 1.9Ω at VGS = -4.5V. Both channels feature low gate threshold voltages of ±1.0V maximum.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact surface-mount package
- Low on-state resistance optimized for high-efficiency power management applications
- Very low gate threshold voltage enabling operation with low logic-level drive signals
- Integrated ESD protection diodes on the gates of both transistors
Applications
- General purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7B' against the manufacturer's official documentation to confirm the packing quantity and carrier type. Ensure that the required tape and reel specifications align with your automated assembly equipment capabilities before finalizing procurement orders.
Selection Notes
Select this component when a matched N-channel and P-channel pair is required in a minimal footprint. Evaluate the thermal resistance characteristics and ensure the application's duty cycle remains within the safe operating area limits defined in the datasheet to prevent junction overheating during switching operations.
Part Context
This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It utilizes the X2-DFN0806-6 package, which measures 0.8mm by 0.6mm. This family is designed to minimize on-state resistance while maintaining fast switching speeds for efficient power control.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package dimensions or generic electrical ratings without verifying pinout compatibility and specific parameter tolerances.
