DMC3021LSD-13

DMC3021LSD-13

$0.70
  • Description:MOSFET N/P-CH 30V 8.5A/7A 8SO
  • Series:-

SKU:9683b43a3b29 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 8.5A/7A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8.5A, 7A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:767pF @ 10V
  • Power - Max:2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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DMC3021LSD-13

Overview

The DMC3021LSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device within an SOIC-8 package. The N-channel transistor (Q2) supports a drain-source voltage of 30V, with a maximum continuous drain current of 8.5A at 25°C and a typical on-resistance of 21mΩ at VGS=10V. The P-channel transistor (Q1) features a -30V breakdown voltage, a -7A continuous drain current, and a typical on-resistance of 39mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Complementary Pair Configuration
  • Low On-Resistance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant

Applications

  • Power Management Functions
  • Analog Switch
  • Load Switch

Procurement Notes

Verify the component against the official datasheet DS32152 Rev. 4-2 to confirm authenticity. Ensure the ordering suffix matches the required tape and reel packaging format. Check for compliance with environmental directives such as RoHS 3 and REACH requirements before finalizing procurement specifications.

Selection Notes

Select this component when a matched N-channel and P-channel MOSFET pair is required in a compact surface-mount footprint. Evaluate the thermal resistance and power dissipation limits relative to the specific PCB layout and ambient operating conditions to ensure reliable performance under load.

Part Context

This part belongs to the DMC3021 series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The standard version is intended for general high-reliability applications, distinct from automotive-grade variants that carry specific qualification suffixes.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q100/101/200 qualification, refer to the related automotive grade part number DMC3021LSDQ-13. Verify pinout compatibility and electrical parameters before substituting other dual MOSFET packages.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q2) is 8.5A at an ambient temperature of +25°C.

Does this component meet RoHS standards?

Yes, the DMC3021LSD-13 is totally lead-free and fully compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).

What is the gate threshold voltage range for the N-channel MOSFET?

The gate threshold voltage (VGS(TH)) for the N-channel device ranges from a minimum of 1V to a maximum of 2.1V, tested at ID = 250μA.

DMC3021LSD-13DMC3021LSD-13
$0.70
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