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The DMC3021LSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device within an SOIC-8 package. The N-channel transistor (Q2) supports a drain-source voltage of 30V, with a maximum continuous drain current of 8.5A at 25°C and a typical on-resistance of 21mΩ at VGS=10V. The P-channel transistor (Q1) features a -30V breakdown voltage, a -7A continuous drain current, and a typical on-resistance of 39mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to +150°C.
Verify the component against the official datasheet DS32152 Rev. 4-2 to confirm authenticity. Ensure the ordering suffix matches the required tape and reel packaging format. Check for compliance with environmental directives such as RoHS 3 and REACH requirements before finalizing procurement specifications.
Select this component when a matched N-channel and P-channel MOSFET pair is required in a compact surface-mount footprint. Evaluate the thermal resistance and power dissipation limits relative to the specific PCB layout and ambient operating conditions to ensure reliable performance under load.
This part belongs to the DMC3021 series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The standard version is intended for general high-reliability applications, distinct from automotive-grade variants that carry specific qualification suffixes.
For automotive applications requiring specific change control or AEC-Q100/101/200 qualification, refer to the related automotive grade part number DMC3021LSDQ-13. Verify pinout compatibility and electrical parameters before substituting other dual MOSFET packages.
The maximum continuous drain current for the N-channel device (Q2) is 8.5A at an ambient temperature of +25°C.
Yes, the DMC3021LSD-13 is totally lead-free and fully compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
The gate threshold voltage (VGS(TH)) for the N-channel device ranges from a minimum of 1V to a maximum of 2.1V, tested at ID = 250μA.