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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5.3A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta), 3.4A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V, 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V, 336pF @ 25V
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMC3032LFDB-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single U-DFN2020-6 package. The N-channel transistor provides a drain-source breakdown voltage of 30V, with a maximum continuous drain current of 5.3A at +25°C and a static on-resistance of 30mΩ at VGS=10V. The P-channel counterpart features a -30V breakdown voltage, a maximum continuous drain current of -3.4A at +25°C, and a static on-resistance of 70mΩ at VGS=-10V. Both devices operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a single compact package
- Optimized for low on-state resistance while maintaining superior switching performance
- Totally lead-free construction fully compliant with RoHS directives and free from halogen and antimony
Applications
- Body control electronics
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. The '-7' suffix indicates a standard tape and reel packing quantity of 3,000 units. Confirm that the required component matches the exact part number and packaging configuration specified in your design requirements to ensure compatibility with automated assembly processes.
Selection Notes
Select this component when a matched complementary pair is required for synchronous rectification or high-efficiency power conversion. Ensure the application operates within the 30V drain-source voltage limits and respects the thermal constraints defined by the 0.8W total power dissipation rating under steady-state conditions on a minimum recommended pad layout.
Part Context
This component belongs to the DM series of complementary MOSFETs produced by Diodes Incorporated. It utilizes the U-DFN2020-6 surface-mount package, which is designed for space-constrained printed circuit board layouts. The internal schematic connects the drains of both transistors together, facilitating efficient implementation in half-bridge configurations.
Replacement Considerations
Direct replacements must match the U-DFN2020-6 package dimensions and provide equivalent electrical characteristics for both the N-channel and P-channel devices. Verify that any substitute maintains the same pinout configuration and meets the required 30V breakdown voltage specifications.
