DMC3060LVTQ-13

$0.12

Description：MOSFET N/P-CH 30V 3.6A TSOT26
Series：-

SKU:dc97ce74b1bf Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 3.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V, 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：395pF @ 15V, 324pF @ 15V
Power - Max：830mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：Automotive
Qualification：AEC-Q101

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DMC3060LVTQ-13

Overview

The DMC3060LVTQ-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source voltage of 30V, with on-resistance values of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Continuous drain current reaches 3.6A at VGS=4.5V. Q2 provides -30V breakdown, with on-resistance of 95mΩ at VGS=-10V and 140mΩ at VGS=-4.5V. The continuous drain current for Q2 is -2.8A at VGS=-4.5V.

Feature Summary

Complementary N-channel and P-channel enhancement mode MOSFETs integrated into a single compact package.
Optimized to minimize on-state resistance while maintaining superior switching performance.
Suitable for automotive applications requiring specific change control; AEC-Q101 qualified and PPAP capable.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the exact ordering suffix when purchasing. The datasheet lists DMC3060LVTQ-7 for 3,000 units per tape and reel, and DMC3060LVTQ-13 for 10,000 units per tape and reel. Confirm that the received component matches the required quantity and packaging format specified in your bill of materials before integration.

Selection Notes

Select this component for high-efficiency power management where space is constrained due to its TSOT26 footprint. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics and maximum junction temperature limits when designing the PCB layout for adequate heat dissipation under steady-state or pulsed load conditions.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed for low on-resistance and fast switching. It serves as a complementary pair solution, replacing discrete N-channel and P-channel devices to save board space. The product is manufactured in IATF 16949 certified facilities, supporting automotive and industrial reliability standards.

Replacement Considerations

Direct replacements must match the TSOT26 package and complementary N/P channel configuration. Verify that substitute parts meet the 30V breakdown voltage and similar on-resistance specifications at corresponding gate drive voltages to ensure circuit compatibility without redesign.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 3.6A at VGS = 4.5V and TA = +25°C.

Is this component suitable for automotive applications?

Yes, the DMC3060LVTQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.