DMC3061SVTQ-7

Overview

The DMC3061SVTQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single TSOT26 package. The N-channel transistor provides a drain-source voltage of 30V, with an on-resistance of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. The P-channel counterpart offers -30V breakdown, featuring 95mΩ resistance at VGS=-10V and 140mΩ at VGS=-4.5V. Both transistors support continuous currents up to 3.4A and -2.7A respectively. The component operates across a temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-channel and P-channel configuration in a compact surface-mount package
• Optimized for high efficiency power management applications through minimized on-state resistance
• Designed to maintain superior switching performance alongside low input capacitance
• Qualified for automotive applications requiring specific change control under AEC-Q101 standards

Applications

• Backlighting circuits
• DC-DC converters
• Power management functions

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation before finalizing procurement. Suffixes such as '-7' or '-13' indicate different packing quantities and carrier types. Confirm that the requested part number matches the specific tape and reel requirements of your assembly line. Cross-reference the date code key to ensure the components fall within acceptable storage and manufacturing timelines.

Selection Notes

Select this component when a matched complementary pair is required for synchronous rectification or load switching. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate the thermal resistance characteristics relative to the expected duty cycle and ambient conditions. Verify that the package dimensions fit the designated footprint on the printed circuit board layout.

Part Context

This device belongs to the DMN/DMP/DMC series of dual MOSFETs from Diodes Incorporated. It serves as a space-saving alternative to discrete N-channel and P-channel transistors. The TSOT26 package allows for automated surface mount assembly. It is designed to replace older generation discrete pairs in portable electronics and power supply designs.

Replacement Considerations

Direct replacements must match the TSOT26 package and complementary channel configuration. Verify that substitute parts meet the 30V breakdown voltage and current handling requirements. Check if the replacement maintains similar gate charge and on-resistance specifications to preserve switching speed and efficiency.

FAQ

What is the maximum continuous drain current for the N-channel transistor?

The maximum continuous drain current for the N-channel transistor (Q1) is 3.4A at a case temperature of +25°C.

Is this component suitable for automotive applications?

Yes, the DMC3061SVTQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities for automotive use.

What is the typical total gate charge for the N-channel device?

The typical total gate charge (Qg) for the N-channel device is 3.5nC at VGS = 4.5V and 6.6nC at VGS = 10V.