DMC3071LVT-7

$0.43

Description：MOSFET N/P-CH 30V 4.6A TSOT26
Series：-

SKU:7b785316ea74 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 4.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 10V, 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V, 254pF @ 15V
Power - Max：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：-
Qualification：-

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DMC3071LVT-7

Overview

The DMC3071LVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single TSOT26 surface-mount package. The N-channel transistor provides a maximum drain-source voltage of 30V, a continuous drain current of 4.6A at 25°C, and a typical on-resistance of 50mΩ at VGS=10V. The P-channel counterpart offers a -30V breakdown voltage, a -3.3A continuous current rating, and a typical on-resistance of 95mΩ at VGS=-10V. Both channels operate with a gate-source voltage range of ±20V and support junction temperatures from -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration in a compact TSOT26 package
Low on-state resistance for high efficiency power management applications
Fast switching speed supported by low input capacitance and gate charge
Totally lead-free and fully RoHS compliant construction

Applications

Backlighting circuits
DC-DC converters
Power management functions

Procurement Notes

Verify the specific ordering suffix when sourcing components. The '-7' suffix indicates packaging in reels of 3000 units. Confirm that the required quantity aligns with standard reel sizes or tape-and-reel specifications provided by authorized distributors. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component for designs requiring a matched N-P channel pair in space-constrained environments. Evaluate thermal performance based on the specified thermal resistance values under steady-state conditions. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic drive levels for reliable switching operation.

Part Context

This part belongs to the DMC3071 series of complementary MOSFETs designed for general-purpose power switching. The 'LVT' designation typically denotes optimized low-voltage threshold characteristics suitable for modern low-power control interfaces. The device utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe.

Replacement Considerations

Direct substitutes include the DMC3071LVT-13, which shares identical electrical specifications but differs only in packaging quantity (10,000 units per reel). Verify pinout compatibility and thermal characteristics before integrating alternative packages into existing layouts.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device is 4.6A at an ambient temperature of +25°C.

Does the device support automotive applications?

The datasheet does not list AEC-Q101 qualification for this specific part number. It is generally intended for consumer and industrial electronics rather than automotive grade environments.