DMC3732UVTQ-7

Overview

The DMC3732UVTQ is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) in a single TSOT26 package. The Q1 offers a drain-source voltage of 30V, with on-resistance values of 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V. The Q2 provides -30V breakdown, with on-resistance of 1000mΩ at VGS=-4.5V and 1500mΩ at VGS=-2.5V. Continuous drain currents are 1.1A for Q1 and -0.7A for Q2 at +25°C. Power dissipation reaches 0.83W on a 1-inch square copper plate.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Features low input capacitance and fast switching speed to enhance circuit efficiency.
• Qualified for automotive applications under AEC-Q101 standards and capable of PPAP submission.
• Manufactured in IATF 16949 certified facilities using lead-free, halogen-free, and antimony-free materials.

Applications

• Backlighting circuits
• DC-DC converters
• Power-management functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel quantity of 3,000 units, while '-13' denotes 10,000 units per reel. Confirm that the component meets RoHS 2 and RoHS 3 directives if environmental compliance is required for your assembly process.

Selection Notes

Select this component for space-constrained designs requiring a matched N-P channel pair. Ensure the gate drive voltage aligns with the specified thresholds; the device exhibits lower on-resistance at higher gate voltages like 4.5V compared to 2.5V or 1.8V. Consider the thermal resistance of 230°C/W on standard FR-4 substrates when calculating heat dissipation limits.

Part Context

This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It serves as a compact solution for replacing discrete N-channel and P-channel transistors in dual-transistor configurations. The TSOT26 package allows for automated surface-mount assembly, supporting high-volume manufacturing requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against existing designs before substituting with other complementary MOSFET pairs.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 1.1A at a case temperature of +25°C.

Is this component suitable for automotive use?

Yes, the DMC3732UVTQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

How does the on-resistance vary with gate voltage?

The on-resistance decreases as the gate voltage increases. For the N-channel device, RDS(ON) is 460mΩ at VGS=4.5V, but rises to 560mΩ at VGS=2.5V and 730mΩ at VGS=1.8V.