SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMC4029SK4-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device in a single TO252-4 package. The N-channel transistor supports a drain-source voltage of 40V with a maximum continuous drain current of 8.3A at 25°C, featuring a typical on-resistance of 15mΩ at VGS=10V. The P-channel counterpart provides -40V breakdown and -6.1A current capability, with a typical on-resistance of 33mΩ at VGS=-10V. Total power dissipation reaches 1.5W at 25°C. Operating junction temperature ranges from -55°C to +150°C.
Verify the component against the official datasheet DS37823 Rev. 3-2 to confirm electrical parameters and pinout compatibility. Ensure the ordering suffix matches the required tape and reel packaging quantity. Check for specific environmental compliance requirements such as halogen-free status if mandated by the end product specifications.
Select this component when a matched N/P-channel pair is required for synchronous rectification or bridge driver stages. Evaluate thermal management capabilities based on the specified junction-to-ambient resistance values. Confirm that the gate threshold voltage and total gate charge align with the driving logic levels and switching frequency requirements of the target application.
This part belongs to the DMC4029SK4 series of complementary MOSFETs. It is designed to offer superior switching performance while minimizing on-state resistance. The device utilizes a green molding compound and matte tin annealed terminals over a copper leadframe, ensuring solderability per MIL-STD-208 standards.
Public confirmed substitute: FDD8424H onsemi.