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The Panasonic DMC502010R is a dual NPN silicon epitaxial planar transistor housed in an SMini5-F3-B package. It features two common-emitter transistors with a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. The device offers a high forward current transfer ratio (hFE) ranging from 210 to 460 at 2 mA, ensuring excellent linearity. Key electrical parameters include a low saturation voltage of 0.13 V typical and a transition frequency of 150 MHz. Total power dissipation is rated at 150 mW, with an operating temperature range of -40°C to +85°C.
Verify the specific suffix '0R' against the manufacturer's latest datasheet to confirm packaging details. The standard reel quantity is 3,000 pieces in embossed thermo-compression sealing. Ensure compliance with RoHS directives and confirm the halogen-free status matches project requirements before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a minimal footprint. The SMini5 package suits space-constrained designs. Evaluate the hFE linearity and low saturation voltage against circuit requirements for efficient amplification. Confirm that the 100 mA current rating and 50 V voltage limits accommodate the intended load conditions without exceeding absolute maximum ratings.
This part belongs to the Panasonic DMC series of general-purpose silicon NPN transistors. It utilizes the SMini5-F3-B package, which is equivalent to the JEITA SC-113CB or SOT-353 standard. The marking symbol on the component body is A6. It serves as a dual-transistor alternative to single units, consolidating two elements into one lead frame structure.
The DSC2001 is documented as a basic part number variant within the same family. Verify pinout compatibility and electrical specifications before substituting. No other direct cross-references are confirmed in the provided documentation.